Application: The Dual MOSFET Driver is used to drive power MOSFETs in circuits that are required to operate in a nuclear environment. Designed as an alternative to the SMD 5962-97A06. Applications include electromechanical motors, hydraulic actuators, power conversion, ordinance activation, divert and attitude control systems, etc.
Related parts:
- Monolithic NED, NT-NED-1001. Nuclear Event Detectors (NEDs) are used to initiate circumvention, following the occurrence of a nuclear blast.
- Circumvention Clamp, NT-Clamp-3001. The Circumvention Clamp is used to remove power from electronic circuits, following the occurrence of a nuclear blast. It is typically triggered by a combination of NEDs and circuit logic.
Key features:
- Can support many applications, such as the Full Bridge, without any external parts.
- The N and P channel FETs cannot be on together. (i.e. no spike through currents).
- Low power, 1/5 the power of leading part.
- Compact, 1/2 the volume of leading part.
- Offered in 16-pin ceramic package.
- Rad-hard.
Full Bridge: The two driver channels, of one Dual MOSFET Driver, can directly control a full bridge configuration (4 power MOSFETs) limiting the gate voltages to 10 V and guaranteeing that the N and P channel FETs can not be on together (no spike thru currents). No external parts are required.
Benefit: Greatly reduces part count, significantly reducing cost and complexity of circuit.
Status: The Dual MOSFET Driver has been fabricated and tested electrically. Radiation tests are planned in late 2009 and early 2010.
Available for purchase:
Subject to ITAR control: Yes
Additional information will be provided upon request.
